60v n-channel mosfet a pp lications: power supply i d a dc-dc converters 115a features: lead free low r ds(on) to minimize conductive loss low gate charge for fast switching application optimized v ( br ) dss capability orderin g information package brand to-220 mxp absolute maximum ratin g s t c =25 unless otherwise s p ecified symbol value unit v dss 60 v i d a 115 i dm 459 158 w 1.05 w/ v gs +/-20 v i as figure 9 a t j and t stg -55 to 175 thermal resistance symbol min typ max unit note: a: calculated continuous current based upon maximum allowable junction temperature +175 . package limitation current is 80a. e as single pulse avalanche energy (l=1mh) 449 mj a pulsed drain current @v g =10v pulsed avalanche energy gate-to-source voltage parameter drain-to-source voltage continuous drain current r ds(on) (max) v ds 60v 6m power dissipation p d derating factor above 25 park number mxp6006dt test conditions parameter water cooled heatsink, p d adjusted for a peak junction temperature of 175 0.95 operating junction and storage temperature range /w r jc junction-to-case - - ?maxpower semiconductor inc. page1 mxp6006dt ver 1.0 sep. 2011 mxp6006dt, MXP6006DF datasheet MXP6006DF to-263 mxp to-263 free datasheet http://
off characteristics t j =25 unless otherwise s p ecified symbol min typ max unit v (br)dss 60 - - v --1 - - 100 - - 100 - - 100 on characteristics t j =25 unless otherwise s p ecified symbol min typ max unit r ds(on) - 4.6 6.0 m ? v gs(th) 2-4v d y namic characteristics essentially independent of operating temperature symbol min typ max unit ciss - 5117 - coss - 534 - crss - 185 - qg - 68 - qgs - 25 - qgd - 16 - td(on) - 18 - tr - 43 - td(off) - 46 - tf - 13 - source-drain diode characteristic s t j =25 unless otherwise s p ecified symbol min typ max unit v sd - - 1.2 v trr -- 108.3 ns qrr -- 85.4 nc 4800 great america parkway, suite# 205, santa clara, ca 95054 all rights reserved. reverse recovery time reverse recovery charge is=38a, di/dt=100a/ s i gss gate-to-source forward leakage na v gs =+20v gate-to-source reverse leakage v gs = -20v i s =24a, v gs =0v ns vdd=30v, id=57a, v g =10v, r g =2.5 ? i dss drain-to-source leakage current ua v ds =48v, v gs =0v v ds =48v, v gs =0v, t j =125 output capacitance reverse transfer capacitance total gate charge parameter test conditions drain-to-source breakdown voltage v gs =0v, i d =250ua diode forward voltage turn-on delay time rise time parameter v gs =0v, v ds =25v, f=1.0mhz v dd =30v, i d =57a, v gs =10v pf nc gate-to-source charge gate-to-drain ("miller") charge published by maxpower semiconductor inc. v gs =10v, i d =24a parameter test conditions input capacitance test conditions turn-off delay time fall time parameter test conditions static drain-to-source on-resistance gate threshold voltage. v gs =v ds , i d =250ua ?maxpower semiconductor inc. page2 mxp6006dt ver 1.0 sep. 2011 free datasheet http://
figure 3. typical output characteristics 0 20 40 60 80 100 120 0 0.5 1 1.5 2 v ds , drain-to source voltage(a) i d , drain current(a) v gs =10,9..6 v v gs =5v figure 1. maximum power dissipation v.s case temperature 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 t c , case temperature( ) p d , power dissipation(w) figure 2. maximum continuous drain current v.s case temperature 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c , case temperature( ) i d , drain current(a) figure 4. breakdown voltage v.s junction temperature 0.88 0.93 0.98 1.03 1.08 1.13 -75 -25 25 75 125 175 t j , junction temperature( ) v (br)dss , drain-to-source breakdown voltage (normalized) i d =5ma figure 5. threshold voltage v.s junction temperature 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 -75 -25 25 75 125 175 t j , junction temperature( ) v gs(th) , threshold voltage (normalized) figure 6. drain-to-source resistance v.s junction temperature 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 -75 -25 25 75 125 175 t j , junction temperature( ) r ds(on) , drain-to-source resistance (normalized) ?maxpower semiconductor inc. page3 mxp6006dt ver 1.0 sep. 2011 free datasheet http://
figure 10. source-drain diode forward voltage 0 1 10 100 0.00 0.40 0.80 1.20 v sd , source-to-drain voltage(v) i sd , reverse drain current(a) figure 8. typical capacitance vs. drain- to-source voltage 0 1000 2000 3000 4000 5000 6000 7000 0 15304560 v ds , drain voltage(v) c, capacitance(pf) c iss c oss c rss figure 9. unclamped inductive switching capability 1 10 100 1000 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 t av , time in avalanche(s) i as , avalanche current(a) figure 7. typical gate charge vs. gate- to-source voltage 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 qgate, gate charge(nc) v gs . gate-to-source voltage(v) starting t j =25 t j =25 t j =175 v gs =0 ?maxpower semiconductor inc. page4 mxp6006dt ver 1.0 sep. 2011 free datasheet http://
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